TSMC continues to pursue its efforts to reduce the size of processors and it is now towards the “2 nanometer” stage that the Taiwanese founder is heading.
Taiwan Semiconductor Manufacturing Company (TSMC) has just launched the construction of its 2nm node semiconductor production complex.
Based on machines employing extreme ultraviolet (EUV) technology, this complex includes both the R&D center and the factory. The construction of the two adjoining buildings was launched concomitantly, because TSMC is in a hurry. Very in a hurry even. According to the Taiwanese’s roadmap, production is expected to begin around 2024.
The 8,000 employees of the site will produce chips not only engraved in 2 nm, but also designed with advanced processes. Indeed, the finesse of engraving is not everything. Besides the minimum spacing between the transistors, also counts the spatial arrangement of the elements as well as the method of etching of the circuits.
Currently, while TSMC finely etches circuits, it often does so using a process called FinFet, which only passes one circuit per gate. The new 2nm plant will be located in the Hsingchu Technology Park, where TSMC already has several sites. It will not only use the GAAFET (gate all around) process which allows several circuits to pass per gate. But in addition, TSMC promises to improve the spatial complexity of chips by using a panel of technologies united under the name “3D Fabric”. A medley of technologies that basically consists of stacking elements (sometimes produced at different engraving fineness) in order to produce more complex, more compact and less expensive chips.
The “one more thing” of the news is that TSMC is taking advantage of the start of construction of the plant to implement its roadmap … in 1nm.